datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  Philips  >>> BF909 PDF

BF909 Datasheet PDF - Philips Electronics

零件编号
产品描述 (功能)
生产厂家
BF909
Philips
Philips Electronics Philips
Other PDF
  no available.
PDF
BF909 Datasheet PDF : BF909 pdf     
BF909 image

DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

FEATURES
• Specially designed for use at 5 V supply voltage
• High forward transfer admittance
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.

APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

Page Link's: 1  2  3  4  5  6  7  8  9  10  11 
 

零件编号
产品描述 (功能)
PDF
生产厂家
N-channel dual gate MOS-FETs
NXP Semiconductors.
N-channel dual gate MOS-FETs
NXP Semiconductors.
N-channel dual-gate MOS-FETs
NXP Semiconductors.
N-channel dual-gate MOS-FETs
NXP Semiconductors.
Dual N-channel dual gate MOS-FETs
NXP Semiconductors.
N-channel dual gate MOS-FETs
NXP Semiconductors.
N-channel dual-gate MOS-FETs
NXP Semiconductors.
Dual-gate MOS-FETs
NXP Semiconductors.
N-channel dual-gate PoLo MOS-FETs
NXP Semiconductors.
N-channel dual gate MOS-FETs
NXP Semiconductors.

Share Link: 

English 한국어 简体中文 日本語 español

All Rights Reserved© datasheetbank.com [ 隐私政策 ]