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BF909 数据手册 ( 数据表 ) - Philips Electronics

零件编号产品描述(功能)生產廠家
BF909 N-channel dual gate MOS-FETs Philips
Philips Electronics Philips
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BF909 Datasheet PDF : BF909 pdf   
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DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

FEATURES
• Specially designed for use at 5 V supply voltage
• High forward transfer admittance
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.

APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

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BF909 有关数据资料列表

零件编号产品描述(功能)PDF生產廠家
BF904 N-channel dual gate MOS-FETs BF904 View NXP Semiconductors.
BF1105 N-channel dual-gate MOS-FETs BF1105 View NXP Semiconductors.
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BF1102,115 Dual N-channel dual gate MOS-FETs BF1102,115 View NXP Semiconductors.
BF909AWR N-channel dual gate MOS-FETs BF909AWR View NXP Semiconductors.
BF1100R Dual-gate MOS-FETs BF1100R View NXP Semiconductors.
BF1202 N-channel dual-gate PoLo MOS-FETs BF1202 View NXP Semiconductors.
BF909 N-channel dual gate MOS-FETs BF909 View NXP Semiconductors.
BF908 Dual-gate MOS-FETs BF908 View NXP Semiconductors.
BF998 Silicon N-channel dual-gate MOS-FETs BF998 View NXP Semiconductors.

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