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CPV362M4UPBF Datasheet PDF - Vishay Semiconductors

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CPV362M4UPBF Datasheet PDF : CPV362M4UPBF pdf     
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The IGBT technology is the key to Vishay´s HPP advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• Optimized for high speed over 5 kHz
   See fig. 1 for current vs. frequency curve
• Totally lead (Pb)-free
• Designed and qualified for industrial level


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