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HM62W16258BLTTI-7 数据手册 ( 数据表 ) - Renesas Electronics

零件编号产品描述(功能)生產廠家
HM62W16258BLTTI-7 4 M SRAM (256-kword × 16-bit) Renesas
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HM62W16258BLTTI-7 Datasheet PDF : HM62W16258BLTTI-7 pdf   
HM62W16258BLTTI-7 image

Description
The Hitachi HM62W16258BI Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16258BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.

Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Fast access time: 70 ns (max)
• Power dissipation:
    - Active: 9.9 mW (typ)
    - Standby: 3.3 µW (typ)
• Completely static memory.
    - No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
    - Three state output
• Battery backup operation.
• Temperature range: –40 to 85°C

 

HM62W16258BLTTI-7 有关数据资料列表

零件编号产品描述(功能)PDF生產廠家
HM62W16258BLTTI-7 4 M SRAM (256-kword × 16-bit) HM62W16258BLTTI-7 View Hitachi -> Renesas Electronics
HM62V16256CLTTI-7 Wide Temperature Range Version 4 M SRAM (256-kword × 16-bit) HM62V16256CLTTI-7 View Hitachi -> Renesas Electronics
HM62W16256B 4 M SRAM (256-kword × 16-bit) HM62W16256B View Hitachi -> Renesas Electronics
HM62V16258BLTT-7 4 M SRAM (256-kword × 16-bit) HM62V16258BLTT-7 View Hitachi -> Renesas Electronics
HM62V16256BLTT-7 4 M SRAM (256-kword × 16-bit) HM62V16256BLTT-7 View Hitachi -> Renesas Electronics
HM62W16258B 4 M SRAM (256-kword × 16-bit) HM62W16258B View Hitachi -> Renesas Electronics
HM62V16256C 4 M SRAM (256-kword × 16-bit) HM62V16256C View Hitachi -> Renesas Electronics
HM6216255HC 4M High Speed SRAM (256-kword × 16-bit) HM6216255HC View Hitachi -> Renesas Electronics
HM62W16255HCJP-10 4M High Speed SRAM (256-kword × 16-bit) HM62W16255HCJP-10 View Hitachi -> Renesas Electronics
HM62W16255HI 4M High Speed SRAM (256-kword × 16-bit) HM62W16255HI View Hitachi -> Renesas Electronics

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