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IRF9510 数据手册 ( 数据表 ) - Intersil

零件编号产品描述(功能)生產廠家
IRF9510 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET Intersil
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IRF9510 Datasheet PDF : IRF9510 pdf   
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This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 3.0A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

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IRF9510 有关数据资料列表

零件编号产品描述(功能)PDF生產廠家
IRFD9110 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET IRFD9110 View Fairchild Semiconductor
BUZ20 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET BUZ20 View Harris Semiconductor
RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs RFL1N10 View New Jersey Semiconductor
RFM12N08 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs RFM12N08 View Harris Semiconductor
RFM12N08 12A, 80Vand 100V,0.200 Ohm, N-Channel Power MOSFETs RFM12N08 View New Jersey Semiconductor
IRF9520 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET IRF9520 View Fairchild Semiconductor
IRFP150N 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET IRFP150N View Fairchild Semiconductor
IRF9150 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET IRF9150 View New Jersey Semiconductor
IRFD120 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET IRFD120 View Fairchild Semiconductor
IRFP140 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET IRFP140 View Fairchild Semiconductor

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