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LET20030C 数据手册 ( 数据表 ) - STMicroelectronics

零件编号产品描述(功能)生產廠家
LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology ST-Microelectronics
STMicroelectronics ST-Microelectronics
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LET20030C Datasheet PDF : LET20030C pdf   
LET20030C image

DESCRIPTION
The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode at 26 V. It is ideal for base station applications requiring high linearity.

Designed for GSM / EDGE / IS-97 applications

• IS-97 CDMA PERFORMANCES
    POUT = 4.5 W
    EFF. = 17 %
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 30 W with 11 dB gain @ 2000 MHz
• ESD PROTECTION

 

LET20030C 有关数据资料列表

零件编号产品描述(功能)PDF生產廠家
PTF081301E Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz PTF081301E View Infineon Technologies
PTFA192401E Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz PTFA192401E View Infineon Technologies
2508051107Y0 RF Power LDMOS Transistors 2508051107Y0 View Freescale Semiconductor
MRFE6VP8600HR6 RF Power LDMOS Transistors MRFE6VP8600HR6 View Freescale Semiconductor
LC801 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR LC801 View Polyfet RF Devices
LK822 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR LK822 View Polyfet RF Devices
LK701 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR LK701 View Polyfet RF Devices
L2721 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR L2721 View Polyfet RF Devices
L2801 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR L2801 View Polyfet RF Devices
LQ801 SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR LDMOS LQ801 View Polyfet RF Devices

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