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LET20030C Datasheet PDF - STMicroelectronics

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LET20030C Datasheet PDF : LET20030C pdf     
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DESCRIPTION
The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode at 26 V. It is ideal for base station applications requiring high linearity.

Designed for GSM / EDGE / IS-97 applications

• IS-97 CDMA PERFORMANCES
    POUT = 4.5 W
    EFF. = 17 %
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 30 W with 11 dB gain @ 2000 MHz
• ESD PROTECTION

 

零件编号
产品描述 (功能)
PDF
生产厂家
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz
Infineon Technologies
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
Infineon Technologies
RF Power LDMOS Transistors
Freescale Semiconductor
RF Power LDMOS Transistors
Freescale Semiconductor
LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V
M/A-COM Technology Solutions, Inc.
LDMOS RF Line Power FET Transistor 15 W , 800-1700 MHz, 26V
M/A-COM Technology Solutions, Inc.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices

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