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LET21030C 数据手册 ( 数据表 ) - STMicroelectronics

零件编号产品描述(功能)生產廠家
LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology ST-Microelectronics
STMicroelectronics ST-Microelectronics
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LET21030C Datasheet PDF : LET21030C pdf   
LET21030C image

DESCRIPTION
The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.

Designed for GSM / EDGE / IS-97 / WCDMA applications

• EXCELLENT THERMAL STABILITY
• POUT = 30 W with 11 dB gain @ 2170 MHz
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION

 

LET21030C 有关数据资料列表

零件编号产品描述(功能)PDF生產廠家
PTF081301E Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz PTF081301E View Infineon Technologies
PTFA192401E Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz PTFA192401E View Infineon Technologies
2508051107Y0 RF Power LDMOS Transistors 2508051107Y0 View Freescale Semiconductor
MRFE6VP8600HR6 RF Power LDMOS Transistors MRFE6VP8600HR6 View Freescale Semiconductor
LP802 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR LP802 View Polyfet RF Devices
LC421 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR LC421 View Polyfet RF Devices
LK701 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR LK701 View Polyfet RF Devices
LK721 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR LK721 View Polyfet RF Devices
LC801 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR LC801 View Polyfet RF Devices
LK721 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR LK721 View Polyfet RF Devices

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