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LET21030C 数据手册 ( 数据表 ) - STMicroelectronics
| 零件编号 | 产品描述（功能) | 生產廠家 |
| LET21030C | RF POWER TRANSISTORS Ldmos Enhanced Technology |  STMicroelectronics  |
| 其他 PDF | 无法使用。 | |
| LET21030C Datasheet PDF :
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DESCRIPTION
The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.
Designed for GSM / EDGE / IS-97 / WCDMA applications
• EXCELLENT THERMAL STABILITY
• POUT = 30 W with 11 dB gain @ 2170 MHz
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
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LET21030C 有关数据资料列表
| 零件编号 | 产品描述（功能) | 生產廠家 | |
| PTF081301E | Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz |
|
Infineon Technologies |
| PTFA192401E | Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz |
|
Infineon Technologies |
| 2508051107Y0 | RF Power LDMOS Transistors |
|
Freescale Semiconductor |
| MRFE6VP8600HR6 | RF Power LDMOS Transistors |
|
Freescale Semiconductor |
| LP802 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
|
Polyfet RF Devices |
| LC421 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
|
Polyfet RF Devices |
| LK701 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
|
Polyfet RF Devices |
| LK721 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
|
Polyfet RF Devices |
| LC801 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
|
Polyfet RF Devices |
| LK721 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
|
Polyfet RF Devices |
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