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LET9002 数据手册 ( 数据表 ) - STMicroelectronics

零件编号产品描述(功能)生產廠家
LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package ST-Microelectronics
STMicroelectronics ST-Microelectronics
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LET9002 Datasheet PDF : LET9002 pdf   
LET9002 image

DESCRIPTION
The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source mode at 26 V. LET9002 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.
It is ideal for digital cellular BTS applications requiring high linearity.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 2 W with 17 dB gain @ 960 MHz / 26 V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS

 

LET9002 有关数据资料列表

零件编号产品描述(功能)PDF生產廠家
PTF081301E Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz PTF081301E View Infineon Technologies
PTFA192401E Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz PTFA192401E View Infineon Technologies
2508051107Y0 RF Power LDMOS Transistors 2508051107Y0 View Freescale Semiconductor
MRFE6VP8600HR6 RF Power LDMOS Transistors MRFE6VP8600HR6 View Freescale Semiconductor
L8821PR SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR LDMOS L8821PR View Polyfet RF Devices
L8821P SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR L8821P View Polyfet RF Devices
LC801 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR LC801 View Polyfet RF Devices
LC421 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR LC421 View Polyfet RF Devices
LK722 SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR LDMOS LK722 View Polyfet RF Devices
LB401 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR LB401 View Polyfet RF Devices

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