datasheetbank_Logo     数据手册搜索引擎和 Datasheet免费下载 PDF
首页  >>>  Nanya  >>> NT128S64VH4A0GM PDF

NT128S64VH4A0GM 数据手册 ( 数据表 ) - Nanya Technology

零件编号产品描述(功能)生產廠家
NT128S64VH4A0GM 16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Nanya
Nanya Technology Nanya
其他 PDF  无法使用。
NT128S64VH4A0GM Datasheet PDF : NT128S64VH4A0GM pdf   
NT128S64VH4A0GM image

Description
NT128S64VH4A0GM is a 144-pin Synchronous DRAM Small Outline Dual In-line Memory Module (SO DIMM) that is organized as a 16Mx64 high-speed memory array. The SO DIMM uses four 16Mx16 SDRAMs in 400mil TSOP II packages and achieves high-speed data transfer rates of up to 133 MHz by employing a prefetch / pipeline hybrid architecture that supports the JEDEC 1N rule while allowing very low burst power.

Features
• 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module
• 16Mx64 Synchronous DRAM SO DIMM
• Inputs and outputs are LVTTL (3.3V) compatible
• 10 Ohm Resistors on DQs
• Single 3.3V ± 0.3V Power Supply
• Single Pulsed RAS interface
• SDRAMs have four internal banks
• Fully Synchronous to positive Clock Edge
• Data Mask for Byte Read/Write control
• Auto Refresh (CBR) and Self Refresh
• Automatic and controlled Precharge Commands
• Programmable Operation:
    - CAS Latency: 2, 3
    - Burst Type: Sequential or Interleave
    - Burst Length: 1, 2, 4, 8,
    - Operation: Burst Read and Write or Multiple Burst Read with Single Write
• Suspend Mode and Power Down Mode
• 13/9/2 Addressing (Row/Column/Bank)
• 8192 refresh cycles distributed across 64ms
• Serial Presence Detect
• Gold contacts

 

NT128S64VH4A0GM 有关数据资料列表

零件编号产品描述(功能)PDF生產廠家
M464S1724DTS 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD M464S1724DTS View Samsung
M464S0924CT1 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD M464S0924CT1 View Samsung
M464S3254DTS 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD M464S3254DTS View Samsung
M464S0824DT1 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD M464S0824DT1 View Samsung
M366S3253DTS-C1H 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD M366S3253DTS-C1H View Samsung
M464S0924DTS 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD M464S0924DTS View Samsung
HDD128M72D18RPW DDR SDRAM Module 1024Mbyte (128Mx72bit), based on 64Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register HDD128M72D18RPW View Hanbit Electronics Co.,Ltd
NT256D64S88A0G 184pin One Bank Unbuffered DDR SDRAM MODULE Based on DDR266/200 32Mx8 SDRAM NT256D64S88A0G View Unspecified
HYS64V2200GU-10 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module HYS64V2200GU-10 View Siemens AG
HYS64V2200GU-8 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module HYS64V2200GU-8 View Infineon Technologies

Share Link : 

English 한국어 日本語 русский español


All Rights Reserved © datasheetbank.com 2014 - 2020  ] [ 隐私政策 ] [ 请求数据表 ]