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RJP30E2 Datasheet PDF - Renesas Electronics

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RJP30E2 Datasheet PDF : RJP30E2 pdf     
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1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
3. High speed switching  tf = 150 ns typ
4. Low leak current  ICES= 1 μA max
5. Isolated package TO-220FL

RJP30E2

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