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零件编号(s) : FGL60N100D
Fairchild Semiconductor
Fairchild Semiconductor
产品描述 (功能) : Insulated Gate Bipolar Transistors (IGBTs)

General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench Gate structure have superior performance in conduction and switching to planar Gate structure, and also have wide noise immunity. These devices are well suitable for IH applications

Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode

Application
    Home Appliance, Induction Heater, IH JAR, Micro Wave Oven

零件编号(s) : FGS15N40L
Fairchild Semiconductor
Fairchild Semiconductor
产品描述 (功能) : Insulated Gate Bipolar Transistors(IGBTs)

General Description
Insulated Gate Bipolar Transistors(IGBTs) with trench Gate structure have superior performance in conductance and switching to planar Gate structure and also have wide noise immunity. These devices are well suitable for strobe application

Features
• High Input Impedance
• High Peak Current Capability (130A)
• Easy Gate Drive

Application
• Strobe Flash

零件编号(s) : APL1001J
Unspecified
Unspecified
产品描述 (功能) : Insulated Gate Bipolar Transistors (IGBTs)

[Microsemi]

About Microsemi
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.
Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.

IGBTs from Microsemi
IGBT products from Microsemi provide high quality solutions for a wide range of high voltage, high power applications. The switching frequency range spans from DC for minimal conduction loss to over 100kHz for very high power density SMPS applications. The frequency range for each product type is shown in the graph below. Each IGBT product represents the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application. There are six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and Field Stop.

零件编号(s) : IRGPH30S
International Rectifier
International Rectifier
产品描述 (功能) : Insulated Gate Bipolar TRANSISTOR

Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable Bipolar Transistors, while at the same time having simpler Gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

Features
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz)

零件编号(s) : IRGPH40S
International Rectifier
International Rectifier
产品描述 (功能) : Insulated Gate Bipolar TRANSISTOR

Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable Bipolar Transistors, while at the same time having simpler Gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

Features
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz)

零件编号(s) : IRGBC30
International Rectifier
International Rectifier
产品描述 (功能) : Fast Speed IGBT

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable Bipolar Transistors, while at the same time having simpler Gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high current applications.



Features

• Switching-loss rating includes all "tail" losses

•  Optimized for medium operating frequency ( 1 to 10kHz)


零件编号(s) : SGR15N40L
Fairchild Semiconductor
Fairchild Semiconductor
产品描述 (功能) : Insulated Gate Bipolar Transistors (IGBT)

General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench Gate structure provide superior conduction and switching performance in comparison with Transistors having a planar Gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications

Features
• High input impedance
• High peak current capability (130A)
• Easy Gate drive

Application
    Strobe flash.

零件编号(s) : IRGPH20
International Rectifier
International Rectifier
产品描述 (功能) : Insulated Gate Bipolar TRANSISTOR Standard Speed IGBT

Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable Bipolar Transistors, while at the same time having simpler Gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

Features
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve

零件编号(s) : IRGPC40S
International Rectifier
International Rectifier
产品描述 (功能) : Insulated Gate Bipolar TRANSISTOR

Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable Bipolar Transistors, while at the same time having simpler Gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

Features
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz)
    See Fig. 1 for Current vs. Frequency curve

零件编号(s) : IRGBC30U
International Rectifier
International Rectifier
产品描述 (功能) : Insulated Gate Bipolar TRANSISTOR

Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable Bipolar Transistors, while at the same time having simpler Gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

Features
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
   See Fig. 1 for Current vs. Frequency curve

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