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CS4N60FA9TDY 数据手册 ( 数据表 ) - ETC

零件编号 CS4N60FA9TDY ETC
ETC 
产品描述(功能)Silicon N-Channel Power MOSFET
CS4N60FA9TDY PDF 数据表 : CS4N60FA9TDY pdf   
CS4N60FA9TDY image

[WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.]

General Description:
CS4N60F A9TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.

Features:
● Fast Switching
● ESD Improved Capability
● Low Gate Charge (Typical Data: 13nC)
● Low Reverse transfer capacitances(Typical: 2.2pF)
● 100% Single Pulse avalanche energy Test

Applications:
   Power switch circuit of adaptor and charger.

 
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