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HB52E649E12 数据手册 ( 数据表 ) - Elpida Memory, Inc

零件编号	产品描述（功能)	生產廠家
HB52E649E12	512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM	Elpida Memory, Inc

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HB52E649E12 Datasheet PDF :

Description
The HB52E649E12 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB52E649E12 is a 64M × 72 × 1-bank Synchronous Dynamic RAM Registered Module, mounted 18 pieces of 256-Mbit SDRAM (HM5225405BTT) sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of register driver and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the HB52E649E12 is 168-pin socket type package (dual lead out). Therefore, the HB52E649E12 makes high density mounting possible without surface mount technology. The HB52E649E12 provides common data inputs and outputs. Decoupling capacitors are mounted beside each TSOP on the module board.

Features
• Fully compatible with : JEDEC standard outline 8-byte DIMM : Intel PCB Reference design (Rev.1.2)
• 168-pin socket type package (dual lead out)
    - Outline: 133.37 mm (Length) × 43.18 mm (Height) × 4.00 mm (Thickness)
    - Lead pitch: 1.27 mm
• 3.3 V power supply
• Clock frequency: 100 MHz (max)
• LVTTL interface
• Data bus width: × 72 ECC
• Single pulsed RAS
• 4 Banks can operates simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length: 1/2/4/8
• 2 variations of burst sequence
    - Sequential
    - Interleave
• Programmable CE latency : 3/4 (HB52E649E12-A6B) : 4 (HB52E649E12-B6B)
• Byte control by DQMB
• Refresh cycles: 8192 refresh cycles/64 ms
• 2 variations of refresh
    - Auto refresh
    - Self refresh

HB52E649E12 有关数据资料列表

零件编号	产品描述（功能)	PDF	生產廠家
HM5225325F	256M LVTTL interface SDRAM 100 MHz 1-Mword × 64-bit × 4-bank/2-Mword × 32-bit × 4-bank PC/100 SDRAM		Hitachi -> Renesas Electronics
HM5264165D-B60	64M LVTTL Interface SDRAM 100 MHz 1-Mword x 16-bit x 4-bank/ 2-Mword x 8-bit x 4-bank/ 4-Mword x 4-bit x 4-bank PC/100 SDRAM		Hitachi -> Renesas Electronics
HYS64V16220GU	3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module, 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module		Siemens AG
HYS64V16220GU	3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module, 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module		Infineon Technologies
HM5212325FBP-B60	128M LVTTL interface SDRAM 100 MHz 1-Mword ×32-bit ×4-bank PC/100 SDRAM		Hitachi -> Renesas Electronics
HYS64V8000GU-10	3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module		Siemens AG
HYS64V8000GU-10	3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module		Infineon Technologies
HYS64V2100GU-10	3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module		Siemens AG
V436416S04V	3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE		Mosel Vitelic Corporation
V436416S04V	3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE		Mosel Vitelic, Corp

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