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FDN304P 数据手册 ( 数据表 ) - Fairchild Semiconductor

FDN304P P-Channel 1.8V Specified PowerTrench MOSFET Fairchild
Fairchild Semiconductor Fairchild
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FDN304P Datasheet PDF : FDN304P pdf   
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General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

• –2.4 A, –20 V. RDS(ON) = 52 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

• Battery management
• Load switch
• Battery protection


FDN304P 有关数据资料列表

FDN304PZ P-Channel 1.8V Specified PowerTrench® MOSFET FDN304PZ View TY Semiconductor
FDN304P P-Channel 1.8V Specified PowerTrench® MOSFET FDN304P View TY Semiconductor
FDMS86300 N-Channel PowerTrench® MOSFET FDMS86300 View ON Semiconductor
SI3443DV P-Channel 2.5V Specified PowerTrench® MOSFET SI3443DV View ON Semiconductor
FDN5630 N-Channel PowerTrench MOSFET FDN5630 View KEXIN Industrial
FDC2512 150V N-Channel PowerTrench® MOSFET FDC2512 View ON Semiconductor
FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET FDMA430NZ View ON Semiconductor
KDS4470 40V N-Channel PowerTrench MOSFET KDS4470 View KEXIN Industrial
KDS4470 40V N-Channel PowerTrench MOSFET KDS4470 View TY Semiconductor
FDN5630 60V N-Channel PowerTrench® MOSFET FDN5630 View TY Semiconductor

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