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FQP30N06 数据手册 ( 数据表 ) - Fairchild Semiconductor

零件编号产品描述(功能)生產廠家
FQP30N06 N-Channel QFET MOSFET Fairchild
Fairchild Semiconductor Fairchild
其他 PDF  2003  
FQP30N06 Datasheet PDF : FQP30N06 pdf   
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Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features
• 30 A, 60 V, RDS(on) = 40 mΩ (Max.) @ VGS = 10 V, ID = 15 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ. 40 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating

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FQP30N06 有关数据资料列表

零件编号产品描述(功能)PDF生產廠家
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VEC2822 MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode VEC2822 View SANYO -> Panasonic
VEC2801 MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode VEC2801 View SANYO -> Panasonic
VEC2803 MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode VEC2803 View SANYO -> Panasonic

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