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HAF2002 数据手册 ( 数据表 ) - Hitachi -> Renesas Electronics

零件编号产品描述(功能)生產廠家
HAF2002 Silicon N Channel MOS FET Series Power Switching Hitachi
Hitachi -> Renesas Electronics Hitachi
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HAF2002 Datasheet PDF : HAF2002 pdf   
HAF2002 image

Features
This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)

 

HAF2002 有关数据资料列表

零件编号产品描述(功能)PDF生產廠家
HAF1009 Silicon P Channel MOS FET Series Power Switching HAF1009 View Renesas Electronics
HAF2012 Silicon N Channel MOS FET Series Power Switching HAF2012 View Renesas Electronics
HAF1004 Silicon P Channel MOS FET Series Power Switching HAF1004 View Renesas Electronics
HAF1008 Silicon P Channel MOS FET Series Power Switching HAF1008 View Renesas Electronics
HAF2001-90 Silicon N Channel MOS FET Series Power Switching HAF2001-90 View Renesas Electronics
HAF2002-90 Silicon N Channel MOS FET Series Power Switching HAF2002-90 View Renesas Electronics
HAF2005 Silicon N Channel MOS FET Series Power Switching HAF2005 View Renesas Electronics
HAF2014 Silicon N Channel MOS FET Series Power Switching HAF2014 View Renesas Electronics
HAF1001 Silicon P Channel MOS FET Series Power Switching HAF1001 View Renesas Electronics
HAF2027 Silicon N Channel MOS FET Series Power Switching HAF2027 View Renesas Electronics

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