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2SC1061 数据手册 ( 数据表 ) - Mospec Semiconductor

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2SC1061 NPN SILICON POWER TRANSISTORS Mospec
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2SC1061 Datasheet PDF : 2SC1061 pdf   
C1061 image

NPN SILICON POWER TRANSISTORS

... designed for use in low frequency power amplifier applications

FEATURES:
* Low Collector-Emitter Saturation Voltage
   VCE(sat) = 1.0V (Max) @IC = 2.0A, IB = 0.2A
* DC Current Gain
   hFE = 35-320 @IC = 0.5A
* Complemenetary to PNP 2SA671

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2SC1061 有关数据资料列表

零件编号产品描述(功能)PDF生產廠家
2SC3710 SILICON POWER TRANSISTOR / Silicon NPN Power Transistors 2SC3710 View Inchange Semiconductor
TIP140 NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS TIP140 View Comset Semiconductors
TIP29F NPN SILICON POWER TRANSISTORS TIP29F View Power Innovations Ltd
TIP31D NPN SILICON POWER TRANSISTORS TIP31D View Power Innovations
TIPL760 NPN SILICON POWER TRANSISTORS TIPL760 View Power Innovations Ltd
BU406 NPN SILICON POWER TRANSISTORS BU406 View Power Innovations
TIPL761B NPN SILICON POWER TRANSISTORS TIPL761B View Power Innovations Ltd
TIPL760 NPN SILICON POWER TRANSISTORS TIPL760 View Power Innovations
TIPL760B NPN SILICON POWER TRANSISTORS TIPL760B View Power Innovations
BU426 NPN SILICON POWER TRANSISTORS BU426 View Power Innovations Ltd

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