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BDX34CG 数据手册 ( 数据表 ) - ON Semiconductor

零件编号产品描述(功能)生產廠家
BDX34CG Darlington Complementary Silicon Power Transistors ON-Semiconductor
ON Semiconductor ON-Semiconductor
其他 PDF  2007  
BDX34CG PDF 数据表 : BDX34CG pdf   
BDX33B image

These devices are designed for general purpose and low speed switching applications.

Features
• High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
• Collector−Emitter Sustaining Voltage at 100 mAdc
   VCEO(sus)
      = 80 Vdc (min) − BDX33B, BDX334B
      = 100 Vdc (min) − BDX33C, BDX334C
• Low Collector−Emitter Saturation Voltage
   VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
                                       − BDX33B, 33C/34B, 34C
• Monolithic Construction with Build−In Base−Emitter Shunt Resistors
• These Devices are Pb−Free and are RoHS Compliant*

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BDX34CG 有关数据资料列表

零件编号产品描述(功能)PDF生產廠家
BD670 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BD670 View STMicroelectronics
BDW93CFP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDW93CFP View STMicroelectronics
MJ2501 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS MJ2501 View STMicroelectronics
BDX53F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX53F View STMicroelectronics
BDX87C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX87C View STMicroelectronics
BDW47G Darlington Complementary Silicon Power Transistors BDW47G View ON Semiconductor
BDW93C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDW93C View STMicroelectronics
NTE245 Silicon Complementary Transistors Darlington Power Amplifier NTE245 View NTE Electronics
2N6377 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 2N6377 View New Jersey Semiconductor
NTE243 Silicon Complementary Transistors Darlington Power Amplifier NTE243 View NTE Electronics

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