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NE5550979A-T1 数据手册 ( 数据表 ) - Renesas Electronics

零件编号产品描述(功能)生產廠家
NE5550979A-T1 Silicon Power LDMOS FET Renesas
Renesas Electronics Renesas
NE5550979A-T1 PDF 数据表 : NE5550979A-T1 pdf   
NE5550979A image

FEATURES
•  High Output Power   : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High power added efficiency  : ηadd = 66% TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High Linear gain   : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
•  High ESD tolerance   : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
•  Suitable for VHF to UHF-BAND Class-AB power amplifier.

APPLICATIONS
•  150 MHz Band Radio System
•  460 MHz Band Radio System
•  900 MHz Band Radio System

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NE5550979A-T1 有关数据资料列表

零件编号产品描述(功能)PDF生產廠家
NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS NE5520279A View California Eastern Laboratories.
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L2821 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR L2821 View Polyfet RF Devices
LK802 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR LK802 View Polyfet RF Devices
L2721 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR L2721 View Polyfet RF Devices

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