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STD2NB80 Datasheet PDF - STMicroelectronics

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STD2NB80 Datasheet PDF : STD2NB80 pdf     
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DESCRIPTION
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 4.6 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL (2500 UNITS)

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

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生产厂家
N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET
Unspecified
N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET
Unspecified
Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK
ON Semiconductor
N-channel 800V - 0.78Ω- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
Unspecified
N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET™ II POWER MOSFET
STMicroelectronics
N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET
STMicroelectronics
N-CHANNEL 100V - 0.22 Ω - 6A IPAK/DPAK LOW GATE CHARGE STripFET™ POWER MOSFET
STMicroelectronics
Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK
ON Semiconductor
Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK
ON Semiconductor
Power MOSFET 30 V, 88 A, Single N--Channel, DPAK/IPAK
ON Semiconductor

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