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SHF-0298 数据手册 ( 数据表 ) - Stanford Microdevices

零件编号产品描述(功能)生產廠家
SHF-0298 DC-10 GHz, 1 Watt AIGaAs/GaAs HFET Stanford-Microdevices
Stanford Microdevices 
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SHF-0298 Datasheet PDF : SHF-0298 pdf   
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Product Description
Stanford Microdevices’ SHF-0298 series is a Al/GaAs/GaAs Heterostructure FET housed in a low-cost ceramic package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current improves power added efficiency.
These HFETs are an ideal choice for high dynamic range, high intercept point requirements. Its output power at 1dB gain compression is +30dBm when biased at +9V and 300mA.
These devices have 0.5 micron gate lengths with a total gate periphery of 2400 microns. These transistors are proven gold based metallization and nitride passivation.

Product Features
• AIGaAs/GaAs Heterostructure FET Technology
• High Power Added Efficiency: Up to 40%
• 1 Watt Output Power at 1dB Compression
• Low Cost Ceramic Package
• +40dBm Output 3rd Order Intercept Point

Applications
• Analog and Digital Wireless Systems • VSAT

 

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SHF-0298 有关数据资料列表

零件编号产品描述(功能)PDF生產廠家
SHF-0289 DC-3 GHz, 1.0 Watt GaAs HFET SHF-0289 View Unspecified
SHF-0186K 0.05-6 GHz, 0.5 Watt GaAs HFET SHF-0186K View Sirenza Microdevices => RFMD
SHF-0186 0.05-12 GHz, 0.5 Watt GaAs HFET SHF-0186 View Sirenza Microdevices => RFMD
SHF-0189 0.05 - 6 GHz, 0.5 Watt GaAs HFET SHF-0189 View Unspecified
SHF-0289 0.05 - 6 GHz, 1.0 Watt GaAs HFET SHF-0289 View Sirenza Microdevices => RFMD
SHF-0189 0.05 - 6 GHz, 0.5 Watt GaAs HFET SHF-0189 View Sirenza Microdevices => RFMD
TGF4250 DC - 10.5 GHz Discrete HFET TGF4250 View TriQuint Semiconductor
HMC797LP5E GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz HMC797LP5E View Hittite Microwave
HMC797 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz HMC797 View Hittite Microwave
TGF4230-SCC DC - 12 GHz Discrete HFET TGF4230-SCC View TriQuint Semiconductor

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