STS4DPFS2LS 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

比赛名单

STS4DPFS2LS

P-CHANNEL 20V - 0.06Ω - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER

STMicroelectronics 

STS4DPFS2LS

P-CHANNEL 20V - 0.06Ω - 4A SO-8

STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

MOSFET

VDSS

RDS(on)

20 V < 0.07 Ω

SCHOTTKY

IF(AV)

VRRM

3A

40 V

ID

4A

VF(MAX)

0.44 V

DESCRIPTION

This product associates the latest low voltage

STripFET™ in p-channel version to a low drop

Schottky diode. Such configuration is extremely ver-

satile in implementing, a large variety of DC-DC

converters for printers, portable equipment, and cel-

lular phones.

SO-8

INTERNAL SCHEMATIC DIAGRAM

MOSFET ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM (q) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

EAS (1) Single Pulse Avalanche Energy

Value

20

20

± 20

4

3.4

16

2

20

Unit

V

V

V

A

A

A

W

mJ

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VRRM Repetitive Peak Reverse Voltage

IF(RMS) RMS Forward Current

IF(AV)

Average Forward Current

IFSM

Surge Non Repetitive Forward Current

IRRM

Repetitive Peak Reverse Current

dv/dt

Critical Rate Of Rise Of Reverse Voltage

(•)Pulse width limited by safe operating area

(1) Starting Tj = 25°C, ID = 2.5 A, VDD = 20 V

Value

Unit

40

V

10

A

TL = 120°C

3

A

δ = 0.5

tp = 10 ms

75

A

Sinusoidal

tp = 2 µs

1

A

F = 1 kHz

10000

V/µs

Note: For the P-CHANNEL MOSFET actual polarity of Voltages

and current has to be reversed

February 2001

1/8

Share Link: