IN74HCT86 查看數據表（PDF） - Integral Corp.
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IN74HCT86 Datasheet PDF : 4 Pages
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IN74HCT86
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIN
IOUT
ICC
PD
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, VCC and GND Pins
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
-0.5 to +7.0
V
-1.5 to VCC +1.5
V
-0.5 to VCC +0.5
V
±20
mA
±25
mA
±50
mA
750
mW
500
Tstg Storage Temperature
-65 to +150
°C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
(Plastic DIP or SOIC Package)
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
VIN, VOUT
TA
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time (Figure 1)
Min Max Unit
4.5 5.5
V
0
VCC
V
-55 +125 °C
0
500
ns
99
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