GLT6400M16(2001) 查看數據表（PDF） - G-Link Technology

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GLT6400M16
(Rev.:2001)

Ultra Low Power 256k x 16 CMOS SRAM

G-Link Technology  

G-LINK

Write Cycle (11)( Vcc=2.3 to 2.7V, TA = -25°C to 85°C )

GLT6400M16

Ultra Low Power 256k x 16 CMOS SRAM

May 2001(Rev. 1.1)

Parameter

Write Cycle Time

Chip Enable to Write End

Address Setup to Write End

Address Setup Time

Write Pulse Width

Write Recovery Time

Data Valid to Write End

Data Hold Time

Write Enable to Output in High-Z

Output Active from Write End

BLE , BHE Setup to Write End

120

Symbol

Unit Note

Min Max

tWC 120 - ns

tCW 100 - ns

tAW 100 - ns

tAS

0

- ns

tWP 80 - ns

tWR

0

- ns

tDW 50 - ns

tDH

0

- ns

tWHZ

0

35 ns

tOW

5

- ns

tBW 100 - ns

Timing Waveform of Write Cycle 1 (Address Controlled)(2~6,8)

tWC

Address

CE1

tAW

tWR

tCW

tBW

UB / LB

tWP

WE

tAS

High-Z

DIN

tDW

tDH

DOUT

tOW

High-Z

G-Link Technology Corporation

2701 Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

-7-

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based

Industrial Park, Hsin Chu, Taiwan.

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