BD650(2012) 查看數據表（PDF） - Comset Semiconductors
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BD650 Datasheet PDF : 5 Pages
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SEMICONDUCTORS
BD644 – 646 – 648 – 650 – 652
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
-ICBO
-ICEO
-IEBO
-VCE(SAT)
-VBE(SAT)
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff Current
Collector-Emitter
saturation Voltage (*)
Base-Emitter
Saturation Voltage (*)
-IE=0,-VCB =-VCEOMAX
-IE=0,-VCB =1/2 -
VCBOMAX, TJ=150°C
-IE=0, -VCE =1/2 -
VCEOMAX
-VEB=5 V, -IC=0
-IC=4 A, -IB=16 mA
-IC=3 A, -IB=12 mA
-IC=5 A, -IB=50 mA
-IC=12 A, -IB=50 mA
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Min Typ Max Unit
-
- 0.1 mA
-
-
1 mA
-
- 0.2 mA
-
- 5.0 mA
-
-
2
-
-
2
V
-
- 2.5
-
-
3
V
18/10/2012
COMSET SEMICONDUCTORS
3|5
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