PD45128168G5-A10-9JF 查看數據表（PDF） - Elpida Memory, Inc

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PD45128168G5-A10-9JF

128M-bit Synchronous DRAM 4-bank, LVTTL

Elpida Memory, Inc 

µPD45128441, 45128841, 45128163

11.3 Write to Read Command Interval

Write command and Read command interval is also 1 cycle.

Only the write data before Read command will be written.

The data bus must be Hi-Z at least one cycle prior to the first DOUT.

Burst length = 4

T0

T1

T2

T3

T4

T5

T6

T7

T8

CLK

/CAS latency = 2

Command

DQ

WRITE A READ B

Hi-Z

DA1

QB1

QB2

QB3

QB4

/CAS latency = 3

Command

DQ

WRITE A READ B

Hi-Z

DA1

QB1

QB2

QB3

QB4

Data Sheet E0031N30

29

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