MC-4R128FKE8D 查看數據表（PDF） - Elpida Memory, Inc

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MC-4R128FKE8D

Direct Rambus DRAM RIMM™ Module 128M-BYTE (64M-WORD x 18-BIT)

Elpida Memory, Inc 

MC-4R128FKE8D

Electrical Specification

Absolute Maximum Ratings

Symbol

Parameter

MIN.

MAX.

Unit

VI,ABS

VDD,ABS

TSTORE

Voltage applied to any RSL or CMOS signal pad with respect to GND

−0.3

Voltage on VDD with respect to GND

−0.5

Storage temperature

−50

VDD + 0.3

V

VDD + 1.0

V

+100

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

DC Recommended Electrical Conditions

Symbol

Parameter and conditions

VDD

VCMOS

Supply voltage

CMOS I/O power supply at pad

VREF

VIL

VIH

VIL,CMOS

VIH,CMOS

VOL,CMOS

VOH,CMOS

IREF

ISCK,CMD

ISIN,SOUT

Reference voltage

RSL input low voltage

RSL input high voltage

CMOS input low voltage

CMOS input high voltage

CMOS output low voltage, IOL,CMOS = 1 mA

CMOS output high voltage, IOH,CMOS = −0.25 mA

VREF current, VREF,MAX

CMOS input leakage current, (0 ≤ VCMOS ≤ VDD)

CMOS input leakage current, (0 ≤ VCMOS ≤ VDD)

MIN.

MAX.

Unit

2.50 − 0.13

2.50 + 0.13

V

2.5V controllers 2.5 − 0.13

2.5 + 0.25

V

1.8V controllers

1.8 − 0.1

1.8 + 0.2

1.4 − 0.2

1.4 + 0.2

V

VREF − 0.5

VREF − 0.2

V

VREF + 0.2

VREF + 0.5

V

−0.3

0.5VCMOS − 0.25 V

0.5VCMOS+0.25 VCMOS + 0.3

V

—

0.3

V

VCMOS − 0.3

—

V

−40.0

+40.0

µA

−40.0

+40.0

µA

−10.0

+10.0

µA

8

Data Sheet E0078N20 (Ver 2.0)

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