BSS138PW,115 查看數據表（PDF） - NXP Semiconductors.
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BSS138PW,115 Datasheet PDF : 16 Pages
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BSS138PW
60 V, 320 mA N-channel Trench MOSFET
1.0
ID
(A)
0.8
VGS = 3.5 V
3.0 V
0.6
0.4
0.2
017aaa112
2.75 V
2.5 V
2.25 V
2.0 V
0.0
0.0
1.0
2.0
3.0
4.0
VDS (V)
Tamb = 25 °C
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical
values
5.0
RDSon
(Ω)
(1)
4.0
017aaa114
(2)
3.0
10−3
ID
(A)
10−4
10−5
017aaa113
(1)
(2)
(3)
10−6
0.0
0.5
1.0
1.5
2.0
VGS (V)
Tamb = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
6.0
RDSon
(Ω)
4.0
017aaa115
2.0
(3)
(1)
2.0
(4)
1.0
(2)
(5)
0.0
0.0
0.2
0.4
0.6
0.8
1.0
ID (A)
0.0
0.0
2.0
4.0
6.0
8.0
10.0
VGS (V)
Tamb = 25 °C
(1) VGS = 2.0 V
(2) VGS = 2.5 V
(3) VGS = 3.0 V
(4) VGS = 3.5 V
(5) VGS = 10 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
ID = 300 mA
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BSS138PW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© Nexperia B.V. 2017. All rights reserved
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