BSS138PW,115 查看數據表（PDF） - NXP Semiconductors.
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BSS138PW,115 Datasheet PDF : 16 Pages
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BSS138PW
60 V, 320 mA N-channel Trench MOSFET
5.0
VGS
(V)
4.0
017aaa119
3.0
2.0
1.0
0.0
0.0
0.2
0.4
0.6
0.8
QG (nC)
ID = 300 mA; VDS = 30 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
1.2
IS
(A)
0.8
0.4
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 15. Gate charge waveform definitions
017aaa120
(1)
(2)
0.0
0.0
0.4
0.8
1.2
VSD (V)
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
BSS138PW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© Nexperia B.V. 2017. All rights reserved
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