STPS1H100 查看數據表（PDF） - STMicroelectronics
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STPS1H100 Datasheet PDF : 10 Pages
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Characteristics
STPS1H100
Figure 7.
Non repetitive surge peak forward Figure 8.
current versus overload duration
(maximum values) (SMAflat)
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SMB)
IM(A)
6
SMAflat
5
Zth(j-a)/Rth(j-a)
1.00
SMB
4
3
2
1
IM
0
1.E-03
t
δ =0.5
1.E-02
t(s)
1.E-01
Ta=25 °C
Ta=75 °C
Ta=110 °C
1.E+00
0.10
Single pulse
0.01
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00 1.E+01
1.E+02
1.E+03
Figure 9.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SMA)
Zth(j-a)/Rth(j-a)
1.00
SMA
Figure 10. Relative variation of thermal
impedance junction to ambient
versus pulse duration (SMAflat)
Zth(j-a)/Rth(j-a)
1.00
SMAflat
0.10
Single pulse
0.01
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00 1.E+01
1.E+02
1.E+03
Figure 11. Reverse leakage current versus
reverse voltage applied
(typical values)
IR(µA)
1.E+03
1.E+02
1.E+01
Tj=125 °C
1.E+00
1.E-01
1.E-02
1.E-03
0
Tj=25 °C
VR(V)
10 20 30 40 50 60 70 80 90 100
0.10
Single pulse
0.01
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
Figure 12. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
100
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
VR(V)
10
1
10
100
4/10
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