HN7G02FU 查看數據表（PDF） - Toshiba

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HN7G02FU

TOSHIBA Multi Chip Discrete Device

Toshiba 

Q1 (Transistor)

−50

−30

IC – VI (ON)

−10

−5 Ta = 100°C

25

−3

−25

−1

−0.5

−0.3

−0.1

Common emitter

VCE = −0.2 V

−0.3

−1

−3

−10

−30

−100

Input voltage VI (ON) (V)

HN7G02FU

−3000

IC – VI (OFF)

−1000

−500

Ta = 100°C 25

−25

−300

−100

−50

Common emitter

VCE = −5 V

−30

−0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 −1.6

Input voltage VI (OFF) (V)

−3000

hFE – IC

−1000

−500

−300

−100

−50

−30

−10

−0.1

Ta = 100°C

25

−25

Common emitter

VCE = −5 V

−0.3

−1

−3

−10

−30

−100

Collector current IC (mA)

VCE (sat) – IC

−3

−1

−0.5

−0.3

−0.1

−0.05

−0.03

−0.01

−0.1

Ta = 100°C

25

−25

Common emitter

IC/IB = 20

−0.3

−1

−3

−10

−30

−100

Collector current IC (mA)

3

2007-11-01

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