RN4906(2007) 查看數據表（PDF） - Toshiba
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RN4906 Datasheet PDF : 5 Pages
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RN4906
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4906
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
z Including two devices in US6 (ultra super mini type with 6 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 4.7kΩ
R2: 47kΩ
(Q1, Q2 Common)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
−50
−50
−5
−100
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
5
100
JEDEC
―
Unit
JEITA
TOSHIBA
―
2-2J1A
V
Weight: 6.8mg (typ.)
V
V
mA
Unit
V
V
V
mA
1
2007-11-01
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