A1618 查看數據表（PDF） - Toshiba

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A1618

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Toshiba 

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)

Characteristics

Symbol

Test Condition

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

ICBO

VCB = −50 V, IE = 0

IEBO

VEB = −5 V, IC = 0

hFE

(Note 2)

VCE = −6 V, IC = −2 mA

VCE (sat) IC = −100 mA, IB = −10 mA

fT

VCE = −10 V, IC = −1 mA

Cob

VCB = −10 V, IE = 0, f = 1 MHz

Note 2: hFE classification Y (Y): 120 to 240, GR (G): 200 to 400

( ) marking symbol

2SA1618

Min Typ. Max Unit

⎯

⎯ −0.1 μA

⎯

⎯ −0.1 μA

120

⎯

400

⎯

−0.1 −0.3

V

80

⎯

⎯ MHz

⎯

4

7

pF

2

2014-03-01

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