AUIRG4PH50S 查看數據表（PDF） - International Rectifier

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AUIRG4PH50S

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

International Rectifier 

AUIRG4PH50S

60

40 Square wave:

60% of rated

voltage

20

Ideal diodes

0

0.1

For both:

Duty cycle: 50%

TJ = 125°C

Tsink= 90°C

Gate drive as specified

Power Dissipation = 40W

Triangular wave:

Clamp voltage:

80% of rated

A

1

10

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000

100

TJ = 25 °C

TJ = 150 °C

10

VGE = 15V

80µs PULSE WIDTH

1

0.0

1.0

2.0

3.0

4.0

5.0

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

4

1000

100

TJ = 150 °C

10

TJ = 25 °C

VCC = 50V

5µs PULSE WIDTH

1

5

6

7

8

9 10 11 12

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

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