IRFR214 查看數據表（PDF） - Intersil
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IRFR214 Datasheet PDF : 6 Pages
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Data Sheet
IRFR214, IRFU214
July 1999 File Number 3274.2
2.2A, 250V, 2.000 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. They are
advanced power MOSFETs are designed for use in
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for high-
power bipolar switching transistors requiring high speed and
low gate-drive power. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA17443.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR214
TO-252AA
IRFR214
IRFU214
TO-251AA
IRFU214
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
Features
• 2.2A, 250V
• rDS(ON) = 2.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• High Input Impedance
• 150oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
4-383
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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