2N5010 查看數據表（PDF） - Microsemi Corporation
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2N5010 Datasheet PDF : 4 Pages
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.)
Parameters / Test Conditions
Base-Emitter Saturation Voltage
IC = 25mA
IC = 20mA
IB = 5mA, Pulsed
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
Collector-Emitter Saturation Voltage
IC = 25mA
IC = 25mA
IC = 25mA
IC = 20mA
IC = 20mA
IC = 20mA
IB = 5mA, Pulsed
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
DYNAMIC CHARACTERISTICS
Symbol
VBE(SAT)
VCE(SAT)
Parameters / Test Conditions
Symbol
Magnitude of small signal short-circuit forward current transfer ratio
VCE = 10Vdc, IC = 25mA, f = 10MHz
2N5010, 2N5011, 2N5012
|hfe|
VCE = 10Vdc, IC = 20mA, f = 10MHz
2N5013, 2N5014, 2N5015
Min.
Min.
1.0
1.0
Max.
Unit
1.0
Vdc
1.0
Vdc
1.4
Vdc
1.5
Vdc
1.6
Vdc
1.6
Vdc
1.6
Vdc
1.8
Vdc
Max.
Unit
Open circuit output capacitance
VCB = 10V, IE = 0, f = 2MHz
Cobo
pF
30
T4-LDS-0067 Rev. 2 (100293)
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