C3505 查看數據表（PDF） - Inchange Semiconductor
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C3505 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3505
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
700
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
900
V
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A
0.5
V
VBEsat Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.2
V
ICBO
Collector cut-off current
VCB=900V; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=10V; IC=0
1.0
mA
hFE
DC current gain
IC=2A ; VCE=5V
10
Switching times
固IN电C半H导AN体GE SEMICONDUCTOR ton
Turn-on time
1.0
IC=3A;IB1=0.6A;IB2=-1.2A
tstg
Storage time
RL=100Ω,PW=20μs
5.0
Duty≤2%
tf
Fall time
1.0
μs
μs
μs
2
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