HN27C256AFP-12T 查看數據表（PDF） - Hitachi -> Renesas Electronics

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HN27C256AFP-12T

32768-word × 8-bit CMOS One Time Electrically Programmable ROM

Hitachi -> Renesas Electronics 

HN27C256AP/AFP Series

AC Characteristics (Ta = 25°C ± 5°C, VCC = 6 V ± 0.25 V, VPP = 12.5 V ± 0.5 V)

Test Conditions

• Input pulse levels: 0.45 V to 2.4 V

• Input rise and fall time: ≤ 20 ns

• Reference levels for measuring timing: Inputs; 0.8 V and 2.0 V

Outputs; 0.8 V and 2.0 V

Parameter

Symbol Min

Typ

Max

Unit

Test Conditions

Address setup time

t AS

2

—

—

µs

OE setup time

t OES

2

—

—

µs

Data setup time

t DS

2

—

—

µs

Address hold time

t AH

0

—

—

µs

Data hold time

t DH

2

—

—

µs

VPP setup time

t VPS

2

—

—

µs

VCC setup time

t VCS

2

—

—

µs

CE initial programming pulse width tPW

0.95

1.0

1.05

ms

CE over programming pulse width

t *1

OPW

2.85

—

78.75 ms

Data valid from OE

t OE

0

—

150

ns

OE to output float delay

t *2

DF

—

—

130

ns

Notes: 1. Refer to the high performance programming flowchart for tOPW.

2. tDF is defined as the time at which the output achieves the open circuit condition and data is no

longer driven.

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