B80C800G-E4/51 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

比赛名单

B80C800G-E4/51

Glass Passivated Single-Phase Bridge Rectifier

Vishay Semiconductors 

B40C800G, B80C800G, B125C800G, B250C800G, B380C800G

www.vishay.com

Vishay Semiconductors

10

1

TJ = 100 °C

0.1

100

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

10

0.01

0

TJ = 25 °C

20

40

60

80

100

Percent of Rated Peak Reverse Voltage (%)

Fig. 5 - Typical Reverse Characteristics Per Diode

1

0.1

1

10

100

Reverse Voltage (V)

Fig. 6 - Typical Junction Capacitance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Case Style WOG

0.388 (9.86)

0.348 (8.84)

0.220 (5.6)

0.160 (4.1)

0.032 (0.81)

0.028 (0.71)

0.348 (8.84)

0.308 (7.82)

1.0 (25.4) MIN.

0.060 (1.52)

0.020 (0.51)

0.220 (5.6)

0.180 (4.6)

0.220 (5.6)

0.180 (4.6)

Revision: 08-Jul-13

3

Document Number: 88534

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: