BAV199F 查看數據表（PDF） - Infineon Technologies

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BAV199F

Silicon Low Leakage Diode

Infineon Technologies 

BAV199...

Thermal Resistance

Parameter

Junction - soldering point1)

BAV199

BAV199F

Symbol

RthJS

Value

Unit

K/W

≤ 360

≤ tbd

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Breakdown voltage

V(BR)

85

-

-V

I(BR) = 100 µA

Reverse current

IR

nA

VR = 75 V

-

-

5

VR = 75 V, TA = 150 °C

-

-

80

Forward voltage

VF

mV

IF = 1 mA

-

- 900

IF = 10 mA

-

- 1000

IF = 50 mA

-

- 1100

IF = 150 mA

-

- 1250

AC Characteristics

Diode capacitance

CT

VR = 0 V, f = 1 MHz

Reverse recovery time

trr

IF = 10 mA, IR = 10 mA, measured at IR = 1mA ,

RL = 100 Ω

-

2

- pF

-

0.6 1.5 µs

Test circuit for reverse recovery time

D.U.T.

Oscillograph

ΙF

EHN00019

Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns,

Ri = 50Ω

Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF

1For calculation of RthJA please refer to Application Note Thermal Resistance

2

Mar-10-2004

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