BF569W 查看數據表（PDF） - Siemens AG

零件编号

产品描述 (功能)

比赛名单

BF569W

PNP Silicon RF Transistor

Siemens AG 

BF 569W

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

min.

typ.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO

IC = 1 mA, IB = 0

35

-

Collector-base cutoff current

ICBO

VCB = 20 , IE = 0

-

-

DC current gain

hFE

IC = 3 mA, VCE = 10 V

20

50

AC Characteristics

Transition frequency

fT

IC = 30 mA, VCE = 10 V, f = 100 MHz

-

Collector-base capacitance

Ccb

VCB = 10 V, VBE = vbe = 0 , f = 1 MHz

-

Collector-emitter capacitance

Cce

VCE = 10 V, VBE = vbe = 0 , f = 1 MHz

-

Noise figure

F

IC = 3 mA, VCE = 10 V, f = 800 MHz

ZS = 60 Ω

-

Cannon-base power gain

Gp

IC = 3 mA, VCB = 10 V, f = 800 MHz

RL = 500 Ω

-

950

0.32

0.15

4.5

14.8

max.

-

100

-

-

-

-

-

-

Unit

V

nA

-

MHz

pF

dB

Semiconductor Group

2

Nov-28-1996

Share Link: