BYG10D-E3 查看數據表（PDF） - Vishay Semiconductors
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BYG10D-E3 Datasheet PDF : 5 Pages
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BYG10D thru BYG10Y
Vishay General Semiconductor
2000
1600
1200
800
TA = 100 °C
TA = 125 °C
TA = 75 °C
TA = 50 °C
TA = 25 °C
400
0
0
IR = 0.5 A, iR = 0.125 A
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Figure 7. Reverse Recovery Charge vs. Forward Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
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Document Number: 88957
Revision: 03-Jun-09
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