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CM75DY-34A

HIGH POWER SWITCHING USE INSULATED TYPE

Mitsumi 

< IGBT MODULES >

CM75DY-34A

HIGH POWER SWITCHING USE

INSULATED TYPE

Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).

2. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under

the chips. Refer to the figure of chip location.

The heat sink thermal resistance should measure just under the chips.

3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating.

4. Junction temperature (T j ) should not increase beyond T j m a x rating.

5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.

6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

7. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.

3 mm

X

3 mm

Mounting

side

Y

Mounting side

-: Concave

3 mm

Mounting side

+: Convex

RECOMMENDED OPERATING CONDITIONS

Symbol

Item

VCC

VGEon

RG

(DC) Supply voltage

Gate (-emitter drive) voltage

External gate resistance

CHIP LOCATION (Top view)

Conditions

Applied across C1-E2

Applied across G1-Es1/G2-Es2

Per switch

Limits

Unit

Min.

Typ.

Max.

-

1000

1100

V

13.5

15.0

16.5

V

6.4

-

64

Ω

Dimension in mm, tolerance: ±1 mm

Tr1/Tr2: IGBT, Di1/Di2: FWDi

Publication Date : June.2011

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