RMWB33001 查看數據表（PDF） - Raytheon Company
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RMWB33001 Datasheet PDF : 7 Pages
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RMWB33001
33 GHz Buffer Amplifier MMIC
Performance
Data
20
19
18
17
16
15
14
13
12
11
10
-12
PRODUCT INFORMATION
RMWB33001 33 GHz BA, Power Output and Gain Vs. Power In
50 Ω Fixture Measurements, Vd=4 V, Idq= 112 mA, T=25 °C
32 GHz
33 GHz
34 GHz
35 GHz
-10
-8
-6
-4
-2
Pin (dBm)
26
25
24
23
22
21
20
19
18
17
16
0
RMWB33001 33 GHz BA, Power Output and Gain at 3 dB Compression Vs.
Frequency and Temperature, 50 Ω Fixture Measurements, Vd=4 V, Idq= 112 mA
22
21
G3dB (T=25ºC)
20
19
18
P3dB (T=25ºC)
17
P3dB (T=75ºC)
16
15
G3dB (T=75ºC)
14
www.raytheon.com/micro
13
31
32
33
34
Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 6
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36
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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