HEF4520B 查看數據表（PDF） - Philips Electronics
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HEF4520B Datasheet PDF : 7 Pages
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Philips Semiconductors
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Product specification
HEF4520B
MSI
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; input transition times ≤ 20 ns
Dynamic power
dissipation per
package (P)
VDD
V
TYPICAL FORMULA FOR P (µW)
5
850 fi + ∑ (foCL) × VDD2
10
3 800 fi + ∑ (foCL) × VDD2
15
10 200 fi + ∑ (foCL) × VDD2
where
fi = input freq. (MHz)
fo = output freq. (MHz)
CL = load capacitance (pF)
∑(foCL) = sum of outputs
VDD = supply voltage (V)
Fig.4 Waveforms showing recovery time for MR; minimum CP0, CP1 and MR pulse widths.
January 1995
5
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