CXG1014N 查看數據表（PDF） - Sony Semiconductor
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CXG1014N Datasheet PDF : 6 Pages
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CXG1014N
Electrical Characteristics
VDD=3.0 V, fRF=1.49 GHz, fLO=1.62 GHz, PLO=–15 dBm, when 50 Ω I/O matching; unless otherwise specified
(Ta=25 °C)
Low noise
amplifier
Mixer
Item
Current consumption
Power gain
Noise figure
Input IP3
Isolation
Current consumption
Conversion gain
Noise figure
Input IP3
LO to RF leak level
Symbol
IDD
GP
NF
IIP3
ISO
IDD
GC
NF
IIP3
PLK
Min.
—
14
—
–7.5
30
—
6
—
–2
—
Typ.
2.2
16
1.85
–3.5
35
3.8
8
8.5
2
–17
Max.
3.0
18
2.6
—
—
5.5
10
10.5
—
–12
Unit
mA
dB
dB
dBm
dB
mA
dB
dB
dBm
dBm
Measurement condition
When no signal
When no signal
Block Diagram
LNA RFIN
LNA
LNA RFOUT
LOIN
LO AMP
MIX
MIX RFIN
IF AMP
IFOUT
Pin Configuration
1
LNA RFIN
NC
CAP
GND
GND
LOIN
CAP
VDD (LO AMP)
16
LNA RFOUT/VDD (LNA)
NC
NC
GND
GND
MIX RFIN
CAP
IF OUT/VDD (MIX, IF AMP)
16pin SSOP (PLASTIC)
—2—
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