HN27C4000G 查看數據表（PDF） - Hitachi -> Renesas Electronics

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HN27C4000G

524288-Word ×8-Bit/262144-Word ×16-Bit CMOS UV Erasable and Programmable ROM

Hitachi -> Renesas Electronics 

HN27C4000G Series

Capacitance (Ta = 25°C, f = 1 MHz)

Parameter

Symbol Min Typ Max Unit Test Conditions Notes

Input capacitance Cin

—

—

12

pF

Vin = 0 V

Except BYTE/VPP

Output capacitance Cout

—

—

20

pF

Vout = 0 V

Read Operation

DC Characteristics (VCC = 5 V ± 10%, VPP = VSS to VCC, Ta = 0 to +70°C)

Parameter

Symbol Min

Typ

Max

Unit

Test Conditions

Input leakage current

I LI

—

—

2

µA

Vin = 5.5 V

Output leakage current

I LO

—

—

2

µA

Vout = 5.5 V/0.45 V

VPP current

I PP1

—

1

20

µA

VPP = 5.5 V

Standby VCC current

I SB1

—

—

1

mA

CE = VIH

I SB2

—

1

20

µA

CE = VCC ± 0.3 V

Operating VCC current

I CC1

—

—

35

mA

Iout = 0 mA, f = 1 MHz

I CC2

—

—

120

mA

Iout = 0 mA, f = 10 MHz

Input voltage

VIL

–0.3*1

—

0.8

V

VIH

2.2

—

VCC + 1*2 V

Output voltage

VOL

—

—

0.45

V

IOL = 2.1 mA

VOH

2.4

—

—

V

IOH = –400 µA

Notes: 1. VIL min = –1.0 V for pulse width ≤ 50 ns

VIL min = –2.0 V for pulse width ≤ 20 ns

2. VIH max = VCC +1.5 V for pulse width ≤ 20 ns

If VIH is over the specified maximum value, read operation cannot be guaranteed.

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