IDT7133 查看數據表（PDF） - Integrated Device Technology

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IDT7133

HIGH SPEED 2K X 16 DUAL-PORT SRAM

Integrated Device Technology 

IDT7133SA/LA, IDT7143SA/LA

High-Speed 2K x 16 Dual-Port RAM

Military, Industrial and Commercial Temperature Ranges

TIMING WAVEFORM OF READ CYCLE NO. 1, EITHER SIDE(5)

tRC

ADDRESS

tAA

DATAOUT

tOH

PREVIOUS DATA VALID

tOH

DATA VALID

BUSYOUT

tBDD(3,4)

2746 drw 07

TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE(5)

tACE(4)

CE

tAOE(4)

tHZ (2)

OE

tLZ (1)

tHZ (2)

DATAOUT

ICC

CURRENT

ISB

tLZ (1)

tPU

50%

VALID DATA

tPD

50%

2746 drw 08

NOTES:

1. Timing depends on which signal is asserted last, OE or CE.

2. Timing depends on which signal is deasserted first, OE or CE.

3. tBDD delay is required only in a case where the opposite port is completing a write operation to the same address location. For simultaneous read operations, BUSY has no

relationship to valid output data.

4. Start of valid data depends on which timing becomes effective last, tAOE, tACE, tAA, or tBDD.

5. R/W = VIH, and the address is valid prior to or coincidental with CE transition LOW.

6.842

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