IKW25T120(2008) 查看數據表（PDF） - Infineon Technologies
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IKW25T120
(Rev.:2008)
(Rev.:2008)
Infineon Technologies
IKW25T120 Datasheet PDF : 16 Pages
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TrenchStop® Series
IKW25T120
VCE
600V
60A
60A
600V
400V
200V
40A
40A
IC
20A
20A
400V
200V
IC
0V
0A
0us
0.5us
1us
1.5us
t, TIME
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=22Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
VCE
0A
0V
0us
0.5us
1us
1.5us
t, TIME
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=22Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
D=0.5
0.2
10-1K/W 0.1
0.05
10-2K/W
0.02
R,(K/W)
0.01
0.229
0.192
single pulse 0.174
0.055
R1
τ, (s)
1.10*10-1
1.56*10-2
1.35*10-3
1.52*10-4
R2
10-3K/W
10µs
100µs
C1=τ1/R1 C2=τ2/R2
1ms 10ms 100ms
tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(D = tp / T)
100K/W
D=0.5
0.2
0.1
10-1K/W
0.05
0.02
0.01
R,(K/W)
0.282
0.317
0.294
0.107
R1
τ, (s)
1.01*10-1
1.15*10-2
1.30*10-3
1.53*10-4
R2
10-2K/W
10µs
single pulse
C1=τ1/R1 C2=τ2/R2
100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 24. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
Power Semiconductors
11
Rev. 2.2 Sep 08
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