IRFH4253DPBF 查看數據表（PDF） - International Rectifier
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IRFH4253DPBF Datasheet PDF : 12 Pages
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Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRFH4253DPbF
Typ.
–––
–––
Q1 Max.
61
30
Q2 Max.
568
60
Units
mJ
A
Min. Typ. Max. Units
Conditions
Q1 ––– ––– 45 A MOSFET symbol
Q2 ––– ––– 45
showing the
Q1 ––– ––– 120 A integral reverse
Q2 ––– ––– 580
p-n junction diode.
Q1 ––– ––– 1.0 V TJ = 25°C, IS = 30A, VGS = 0V
Q2 ––– ––– 0.75
TJ = 25°C, IS = 30A, VGS = 0V
Q1 ––– 16 ––– ns Q1 TJ = 25°C, IF = 30A
Q2 ––– 29 –––
VDD = 13V, di/dt = 235A/µs
Q1 ––– 13 ––– nC Q2 TJ = 25°C, IF = 30A
Q2 ––– 41 –––
VDD = 13V, di/dt = 250A/µs
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June 10, 2013
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