M74HCT367 查看數據表（PDF） - STMicroelectronics

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M74HCT367

HEX BUS BUFFER WITH 3 STATE OUTPUT NON INVERTING

STMicroelectronics 

M74HCT367

CAPACITIVE CHARACTERISTICS

Test Condition

Value

Symbol

Parameter

VCC

(V)

TA = 25°C

-40 to 85°C -55 to 125°C Unit

Min. Typ. Max. Min. Max. Min. Max.

CIN Input Capacitance

5 10

10

10 pF

CPD Power Dissipation

Capacitance (note

47

pF

1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/6 (per

Channel)

TEST CIRCUIT

TEST

tPLH, tPHL

tPZL, tPLZ

tPZH, tPHZ

CL = 50pF/150pF or equivalent (includes jig and probe capacitance)

R1 = 1KΩ or equivalent

RT = ZOUT of pulse generator (typically 50Ω)

SWITCH

Open

VCC

GND

4/9

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